X-ray detection device and method of driving an X-ray detection panel

ABSTRACT

An X-ray detection device includes an X-ray detection panel having a plurality of gate-lines, a plurality of data-lines, a plurality of bias-lines, a plurality of pixel circuits, a gate driving circuit that sequentially provides a gate signal to the pixel circuits via the gate-lines when an X-ray detecting operation is performed, a readout integrated circuit that performs a readout operation of a detection signal that is output from the pixel circuits via the data-lines when the X-ray detecting operation is performed, a bias driving circuit that provides a forward-bias voltage or a reverse-bias voltage to the pixel circuits via the bias-lines, and an operation control circuit that controls a forward-biasing operation and an initializing operation to be simultaneously performed on the pixel circuits.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplications No. 10-2012-0123950, filed on Nov. 5, 2012 in the KoreanIntellectual Property Office (KIPO), the contents of which areincorporated herein in its entirety by reference.

BACKGROUND

1. Technical Field

Example embodiments relate generally to an X-ray detection technique.More particularly, embodiments of the inventive concept relate to anX-ray detection device and a method of driving an X-ray detection panel.

2. Description of the Related Art

Generally, conventional X-ray detection devices detect an X-ray using achemical film. Thus, the conventional X-ray detection devices can beused only for an unmoving subject. In addition, the conventional X-raydetection devices may result in high costs because a new chemical filmis required to detect the X-ray exposure. For this reason, a flat paneltype X-ray detection device has been suggested. The flat panel typeX-ray detection device implements a digital image based on a detectionsignal when a diode (e.g., PIN diode, etc) of each pixel circuit of theflat panel type X-ray detection device generates the detection signal(i.e., generates charges) corresponding to the X-ray.

The flat panel type X-ray detection device needs to eliminate theremaining charges in the diode of each pixel circuit prior to an X-raydetecting operation (another X-ray detecting operation) in order toreduce an image-lag. Hence, the diode of each pixel circuit isforward-biased prior to the X-ray detecting operation in the flat paneltype X-ray detection device. For this operation, each pixel circuitincludes additional transistors for forward-biasing the diode of eachpixel circuit (i.e., in addition to a switching transistor), or eachpixel circuit alternately performs the X-ray detecting operation and aforward-biasing operation for each gate-line.

However, compared to when each pixel circuit includes the switchingtransistor, a fill-factor may decrease, and a noise due to linecapacitance increases may occur in the flat panel type X-ray detectiondevice when each pixel circuit includes the switching transistor and theadditional transistors. In addition, a frame-rate may necessarilydecrease in the flat panel type X-ray detection device when each pixelcircuit alternately performs the X-ray detecting operation and theforward-biasing operation for each gate-line. Therefore, theseapproaches may not be appropriate for manufacturing the flat panel typeX-ray detection device in a big size.

SUMMARY

Aspects of some example embodiments are directed toward an X-raydetection device capable of simultaneously performing a forward-biasingoperation on all pixel circuits included in an X-ray detection panel,and simultaneously performing an initializing operation on all pixelcircuits included in the X-ray detection panel without fill-factordecreases and frame-rate decreases.

Aspects of some example embodiments are directed toward a method ofdriving an X-ray detection panel capable of simultaneously performing aforward-biasing operation on all pixel circuits included in the X-raydetection panel, and simultaneously performing an initializing operationon all pixel circuits included in the X-ray detection panel withoutfill-factor decreases and frame-rate decreases.

According to some example embodiments, an X-ray detection device mayinclude an X-ray detection panel having a plurality of gate-lines, aplurality of data-lines, a plurality of bias-lines, and a plurality ofpixel circuits, a gate driving circuit configured to sequentiallyprovide a gate signal to the pixel circuits via the gate-lines when anX-ray detecting operation is performed, a readout integrated circuitconfigured to perform a readout operation of a detection signal that isoutput from the pixel circuits via the data-lines when the X-raydetecting operation is performed, a bias driving circuit configured toprovide a forward-bias voltage or a reverse-bias voltage to the pixelcircuits via the bias-lines, and an operation control circuit configuredto control a forward-biasing operation and an initializing operation tobe simultaneously performed on the pixel circuits.

In example embodiments, each of the pixel circuits may include aswitching transistor having a gate terminal coupled to one of thegate-lines and a first terminal coupled to one of the data-lines, and adiode having a cathode coupled to a second terminal of the switchingtransistor and an anode coupled to one of the bias-lines.

In example embodiments, the diode may receive an X-ray to generatecharges corresponding to the detection signal.

In example embodiments, the diode may receive a visible-ray to generatecharges corresponding to the detection signal when an X-ray is convertedto the visible-ray by a scintillator.

In example embodiments, the operation control circuit may include afirst operation controller configured to connect the gate drivingcircuit to the X-ray detection panel when the X-ray detecting operationis performed, and to block the gate driving circuit from the X-raydetection panel when the forward-biasing operation and the initializingoperation are performed, a second operation controller configured to beblocked from the X-ray detection panel when the X-ray detectingoperation is performed, and to simultaneously provide a turn-on voltagecorresponding to the gate signal to the pixel circuits via thegate-lines when the forward-biasing operation and the initializingoperation are performed, and a third operation controller configured tobe blocked from the X-ray detection panel when the X-ray detectingoperation is performed, and to simultaneously provide a bias referencevoltage to the pixel circuits via the data-lines when theforward-biasing operation is performed.

In example embodiments, the bias driving circuit may provide thereverse-bias voltage to the pixel circuits when the initializingoperation and the X-ray detecting operation are performed, and the biasdriving circuit may provide the forward-bias voltage to the pixelcircuits when the forward-biasing operation is performed.

In example embodiments, the first operation controller may include aplurality of first transistors each having a first terminal coupled toone of the gate-lines and a second terminal coupled to the gate drivingcircuit, and a first control transistor having a first terminal coupledto the turn-on voltage, a second terminal coupled to respective gateterminals of the first transistors, and a gate terminal that receives afirst control signal.

In example embodiments, the first control transistor may turn-on basedon the first control signal, and the first transistors maysimultaneously turn-on when the X-ray detecting operation is performed.

In example embodiments, the first control transistor may turn-off basedon the first control signal, and the first transistors maysimultaneously turn-off when the forward-biasing operation and theinitializing operation are performed.

In example embodiments, the second operation controller may include aplurality of second transistors each having a first terminal coupled toone of the gate-lines and a second terminal coupled to a gate terminalof the second transistor, and a second control transistor having a firstterminal coupled to the turn-on voltage, a second terminal coupled torespective gate terminals of the second transistors, and a gate terminalthat receives a second control signal.

In example embodiments, the second control transistor may turn-off basedon the second control signal, and the second transistors maysimultaneously turn-off when the X-ray detecting operation is performed.

In example embodiments, the second control transistor may turn-on basedon the second control signal, and the second transistors maysimultaneously turn-on when the forward-biasing operation and theinitializing operation are performed.

In example embodiments, the third operation controller may include aplurality of third transistors each having a first terminal coupled toone of the data-lines and a second terminal coupled to another of thedata-lines, a third sub-transistor having a first terminal coupled tothe bias reference voltage and a second terminal coupled to one of thethird transistors, and a third control transistor having a firstterminal coupled to the turn-on voltage, a second terminal coupled torespective gate terminals of the third transistors and a gate terminalof the third sub-transistor, and a gate terminal that receives a thirdcontrol signal.

In example embodiments, the third control transistor may turn-off basedon the third control signal, and the third sub-transistor and the thirdtransistors may simultaneously turn-off when the initializing operationand the X-ray detecting operation are performed.

In example embodiments, the third control transistor may turn-on basedon the third control signal, and the third sub-transistor and the thirdtransistors may simultaneously turn-on when the forward-biasingoperation is performed.

In example embodiments, an initialization reference voltage may beprovided to the data-lines by the readout integrated circuit when theinitializing operation is performed.

In example embodiments, the third operation controller may include aplurality of third transistors each having a first terminal coupled toone of the data-lines and a second terminal coupled to another of thedata-lines, a reference voltage selection circuit configured to outputthe bias reference voltage when the forward-biasing operation isperformed, and to output an initialization reference voltage when theinitializing operation is performed, a third sub-transistor having afirst terminal coupled to the reference voltage selection circuit and asecond terminal coupled to one of the third transistors, and a thirdcontrol transistor having a first terminal coupled to the turn-onvoltage, a second terminal coupled to respective gate terminals of thethird transistors and a gate terminal of the third sub-transistor, and agate terminal that receives a third control signal.

In example embodiments, the third control transistor may turn-off basedon the third control signal, and the third sub-transistor and the thirdtransistors may simultaneously turn-off when the X-ray detectingoperation is performed.

In example embodiments, the third control transistor may turn-on basedon the third control signal, and the third sub-transistor and the thirdtransistors may simultaneously turn-on when the forward-biasingoperation and the initializing operation are performed.

In example embodiments, the initialization reference voltage may beprovided to the data-lines by the third operation controller when theinitializing operation is performed.

According to some example embodiments, a method of driving an X-raydetection panel having a plurality of gate-lines, a plurality ofdata-lines, a plurality of bias-lines, and a plurality of pixel circuitsmay include a step of simultaneously performing a forward-biasingoperation on the pixel circuits, a step of simultaneously performing aninitializing operation on the pixel circuits, and a step of sequentiallyperforming an X-ray detecting operation on the pixel circuits for eachgate-line.

In example embodiments, the step of simultaneously performing theforward-biasing operation may include a step of simultaneously providinga turn-on voltage to the gate-lines, a step of simultaneously providinga bias reference voltage to the data-lines, and a step of simultaneouslyproviding a forward-bias voltage to the bias-lines.

In example embodiments, the step of simultaneously performing theinitializing operation may include a step of simultaneously providing aturn-on voltage to the gate-lines, a step of simultaneously providing aninitialization reference voltage to the data-lines, and a step ofsimultaneously providing a reverse-bias voltage to the bias-lines.

In example embodiments, the step of sequentially performing the X-raydetecting operation may include a step of sequentially providing a gatesignal to the gate-lines, a step of simultaneously providing areverse-bias voltage to the bias-lines, and a step of sequentiallyperforming a readout operation of a detection signal that is output fromthe data-lines.

Therefore, an X-ray detection device according to example embodimentsefficiently reduces an image-lag without fill-factor decreases andframe-rate decreases by simultaneously performing a forward-biasingoperation on all pixel circuits included in an X-ray detection panel,and by simultaneously performing an initializing operation on all pixelcircuits included in the X-ray detection panel.

In addition, a method of driving an X-ray detection panel according toexample embodiments efficiently reduces an image-lag without fill-factordecreases and frame-rate decreases by simultaneously performing aforward-biasing operation on all pixel circuits included in the X-raydetection panel, and by simultaneously performing an initializingoperation on all pixel circuits included in the X-ray detection panel.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative, non-limiting example embodiments will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings.

FIG. 1 is a block diagram illustrating an X-ray detection deviceaccording to example embodiments.

FIG. 2 is a block diagram illustrating an example embodiment of an X-raydetection device of FIG. 1.

FIG. 3 is a timing diagram illustrating an example in which an X-raydetection device of FIG. 2 operates.

FIGS. 4A and 4B are circuit diagrams illustrating voltages provided toeach pixel circuit as an X-ray detection device of FIG. 2 operates.

FIG. 5 is a block diagram illustrating another example embodiment of anX-ray detection device of FIG. 1.

FIG. 6 is a block diagram illustrating a reference voltage selectioncircuit for providing a selected reference voltage to data-lines in anX-ray detection device of FIG. 5.

FIG. 7 is a timing diagram illustrating an example in which an X-raydetection device of FIG. 5 operates.

FIGS. 8A and 8B are circuit diagrams illustrating voltages provided toeach pixel circuit as an X-ray detection device of FIG. 5 operates.

FIG. 9 is a flow chart illustrating a method of driving an X-raydetection panel according to example embodiments.

FIG. 10 is a block diagram illustrating a computing system having anX-ray detection device according to example embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Various example embodiments will be described more fully hereinafterwith reference to the accompanying drawings, in which some exampleembodiments are shown. The present inventive concept may, however, beembodied in many different forms and should not be construed as limitedto the example embodiments set forth herein. Rather, these exampleembodiments are provided so that this disclosure will be thorough andcomplete, and will fully convey the scope of the present inventiveconcept to those skilled in the art. In the drawings, the sizes andrelative sizes of layers and regions may be exaggerated for clarity.Like numerals refer to like elements throughout.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are used to distinguish oneelement from another. Thus, a first element discussed below could betermed a second element without departing from the teachings of thepresent inventive concept. As used herein, the term “and/or” includesany and all combinations of one or more of the associated listed items.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening element(s) maybe present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, there areno intervening elements present. Other words used to describe therelationship between elements should be interpreted in a like fashion(e.g., “between” versus “directly between,” “adjacent” versus “directlyadjacent,” etc.).

The terminology used herein is for the purpose of describing particularexample embodiments only and is not intended to be limiting of thepresent inventive concept. As used herein, the singular forms “a,” “an”and “the” are intended to include the plural forms as well, unless thecontext clearly indicates otherwise. It will be further understood thatthe terms “comprises” and/or “comprising,” when used in thisspecification, specify the presence of stated features, integers, steps,operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this inventive concept belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 is a block diagram illustrating an X-ray detection deviceaccording to example embodiments.

Referring to FIG. 1, the X-ray detection device 100 may include an X-raydetection panel 110, a gate driving circuit 120, a readout integratedcircuit 130, a bias driving circuit 140, and an operation controlcircuit (i.e., a first operation controller 150, a second operationcontroller 160, and a third operation controller 170).

When an X-ray generation device illuminates an X-ray to penetrate asubject, the X-ray detection device 100 may detect the X-ray. For thisoperation, the X-ray detection panel 110 may include a plurality ofgate-lines GL1 through GLn, a plurality of data-lines OUT1 through OUTm,a plurality of bias-lines BVL1 through BVLm, and a plurality of pixelcircuits. In one example embodiment, the gate-lines GL1 through GLn maybe arranged in a first direction, and the data-lines OUT1 through OUTmand the bias-lines BVL1 through BVLm may be arranged in a seconddirection. For example, the first direction may cross (or beperpendicular to) the second direction. The pixel circuits may bearranged at locations corresponding to crossing points of the gate-linesGL1 through GLn and the data-lines OUT1 through OUTm. Thus, the pixelcircuits may be arranged in a matrix form in the X-ray detection panel110. Each pixel circuit may include a switching transistor and a diode(e.g., PIN diode, etc). Specifically, a gate terminal of the switchingtransistor may be coupled to one of the gate-lines GL1 through GLn, afirst terminal of the switching transistor may be coupled to one of thedata-lines OUT1 through OUTm, and a second terminal of the switchingtransistor may be coupled to a cathode of the diode. In addition, thecathode of the diode may be coupled to the second terminal of theswitching transistor, and an anode of the diode may be coupled to one ofthe bias-lines BVL1 through BVLm. The diode may operate as an opticalsensor. In one example embodiment, the diode may receive the X-ray togenerate charges corresponding to a detection signal. In another exampleembodiment, the diode may receive a visible-ray to generate the chargescorresponding to the detection signal when the X-ray is converted to thevisible-ray by a scintillator. The scintillator may convert the X-ray tothe visible-ray because the scintillator has a material that emits light(i.e., the visible-ray) based on a collision with the X-ray.

The gate driving circuit 120 may be connected to the X-ray detectionpanel 110 when the X-ray detecting operation is performed. Then, thegate driving circuit 120 may sequentially provide a gate signal (or, ascan signal) to the pixel circuits via the gate-lines GL1 through GLn.On the other hand, the gate driving circuit 120 may be blocked from theX-ray detection panel 110 when the forward-biasing operation and theinitializing operation are performed. Here, a connection between theX-ray detection panel 110 and the gate driving circuit 120 may becontrolled by the first operation controller 150. The readout integratedcircuit 130 may perform a readout operation of a detection signal, wherethe detection signal is input from the pixel circuits via the data-linesOUT1 through OUTm, when the X-ray detecting operation is performed. Thatis, the readout integrated circuit 130 may be coupled to the pixelcircuits via the data-lines OUT1 through OUTm of the X-ray detectionpanel 110. In addition, the readout integrated circuit 130 may receivethe charges (i.e., the detection signal) generated by the diode of eachpixel circuit. In some example embodiments, the readout integratedcircuit 130 may convert the detection signal to a digital signal usingan analog-to-digital converting (ADC) circuit, etc. Thus, the X-raydetection device 100 may implement a digital image by performing thereadout operation of the detection signal when the detection signal isoutput from the pixel circuits. The bias driving circuit 140 may providea forward-bias voltage and a reverse-bias voltage to the pixel circuitsvia the bias-lines BVL1 through BVLm. Here, a voltage level of theforward-bias voltage is higher than a voltage level of the reverse-biasvoltage. Specifically, the bias driving circuit 140 may provide thereverse-bias voltage to the pixel circuits when the initializingoperation and the X-ray detecting operation are performed, and mayprovide the forward-bias voltage to the pixel circuits when theforward-biasing operation is performed.

The operation control circuit 150, 160, and 170 may control theforward-biasing operation to be simultaneously performed on all pixelcircuits, and may control the initializing operation to besimultaneously performed on all pixel circuits. As described above, theoperation control circuit 150, 160, and 170 may include the firstoperation controller 150, the second operation controller 160, and thethird operation controller 170. The first operation controller 150 mayconnect the gate driving circuit 120 to the X-ray detection panel 110when the X-ray detecting operation is performed, and may block the gatedriving circuit 120 from the X-ray detection panel 110 when theforward-biasing operation and the initializing operation are performed.The second operation controller 160 may be blocked from the X-raydetection panel 110 when the X-ray detecting operation is performed, andmay simultaneously provide a turn-on voltage corresponding to the gatesignal to the pixel circuits via the gate-lines GL1 through GLn when theforward-biasing operation and the initializing operation are performed.Here, the turn-on voltage may be determined as a voltage that is capableof turning-on the switching transistor of each pixel circuit. Forexample, the turn-on voltage may have the same voltage level as the gatesignal, or may have a different voltage level from the gate signal. Thethird operation controller 170 may be blocked from the X-ray detectionpanel 110 when the X-ray detecting operation is performed, and maysimultaneously provide a bias reference voltage to the pixel circuitsvia the data-lines OUT1 through OUTm when the forward-biasing operationis performed. In one example embodiment, the third operation controller170 may simultaneously provide an initialization reference voltage tothe pixel circuits via the data-lines OUT1 through OUTm when theinitializing operation is performed. In another example embodiment, thethird operation controller 170 may be blocked from the X-ray detectionpanel 110 when the initializing operation is performed. In this case,the readout integrated circuit 130 may simultaneously provide theinitialization reference voltage to the pixel circuits via thedata-lines OUT1 through OUTm when the initializing operation isperformed.

As such, because of the operation control circuit 150, 160, and 170, theX-ray detection device 100 may simultaneously perform theforward-biasing operation on all pixel circuits of the X-ray detectionpanel 110, and may simultaneously perform the initializing operation onall pixel circuits of the X-ray detection panel 110. As a result, theX-ray detection device 100 may efficiently reduce an image-lag withoutfill-factor decreases and frame-rate decreases. In some exampleembodiments, the gate-lines GL1 through GLn, the data-lines OUT1 throughOUTm, the bias-lines BVL1 through BVLm, and the pixel circuits (i.e.,the switching transistors and the diodes) may be integrated on the X-raydetection panel 110. In addition, the gate driving circuit 120, thereadout integrated circuit 130, the bias driving circuit 140 and/or theoperation control circuit 150, 160, and 170 may be implemented by onechip. In this case, the chip may be directly attached to the X-raydetection panel 110, or may be attached to the X-ray detection panel 110in a tape carrier package (TCP) using a flexible printed circuit (FPC)film. However, a manufacturing method of the X-ray detection device 100is not limited thereto.

FIG. 2 is a block diagram illustrating an example embodiment of an X-raydetection device of FIG. 1. FIG. 3 is a timing diagram illustrating anexample in which an X-ray detection device of FIG. 2 operates.

Referring to FIGS. 2 and 3, an example embodiment of the X-ray detectiondevice 100 of FIG. 1 is illustrated in FIG. 2. In more detail, the X-raydetection device 200 may include an X-ray detection panel 210, a gatedriving circuit 220, a readout integrated circuit 230, a bias drivingcircuit 240, and an operation control circuit 250, 260, and 270. Sincethe X-ray detection panel 210, the gate driving circuit 220, the readoutintegrated circuit 230, and the bias driving circuit 240 are describedabove, the X-ray detection device 200 will be described focused on theoperation control circuit 250, 260, and 270. As described above, theoperation control circuit 250, 260, and 270 may include a firstoperation controller 250, a second operation controller 260, and a thirdoperation controller 270 to simultaneously perform a forward-biasingoperation on all pixel circuits PX, and to simultaneously perform aninitializing operation on all pixel circuits PX. As illustrated in FIG.2, each pixel circuit PX may include a switching transistor and a diode.Specifically, a gate terminal of the switching transistor may be coupledto one of the gate-lines GL1 through GLn, a first terminal of theswitching transistor may be coupled to one of the data-lines OUT1through OUTm, and a second terminal of the switching transistor may becoupled to a cathode of the diode. In addition, an anode of the diodemay be coupled to one of the bias-lines BVL1 through BVLm.

The first operation controller 250 may connect the gate driving circuit220 to the X-ray detection panel 210 when an X-ray detecting operationXDT is performed, and may block the gate driving circuit 220 from theX-ray detection panel 210 when a forward-biasing operation FB and aninitializing operation INI are performed. For this operation, the firstoperation controller 250 may include a plurality of first transistors T1and a first control transistor CT1. Specifically, a first terminal ofthe first transistor T1 may be coupled to one of the gate-lines GL1through GLn, a second terminal of the first transistor T1 may be coupledto the gate driving circuit 220, and a gate terminal of the firsttransistor T1 may be coupled to a second terminal of the first controltransistor CT1. As illustrated in FIG. 2, the first transistors T1 maybe coupled in parallel. In addition, a first terminal of the firstcontrol transistor CT1 may be coupled to a turn-on voltage V1, thesecond terminal of the first control transistor CT1 may be coupled torespective gate terminals of the first transistors T1, and a gateterminal of the first control transistor CT1 may receive a first controlsignal M1. As a result, the first transistors T1 may simultaneouslyturn-on when the X-ray detecting operation XDT is performed because theturn-on voltage V1 is simultaneously provided to respective gateterminals of the first transistors T1 as the first control transistorCT1 turns-on based on the first control signal M1 (e.g., a high voltagelevel in FIG. 3). On the other hand, the first transistors T1 maysimultaneously turn-off when the forward-biasing operation FB and theinitializing operation INI are performed because the first controltransistor CT1 turns-off based on the first control signal M1 (e.g., alow voltage level in FIG. 3). Thus, the gate driving circuit 220 may beconnected to the X-ray detection panel 210 when the X-ray detectingoperation XDT is performed in the X-ray detection device 200, and thegate driving circuit 220 may be blocked from the X-ray detection panel210 when the forward-biasing operation FB and the initializing operationINI are performed in the X-ray detection device 200. Since a structureof the first operation controller 250 illustrated in FIG. 2 is anexample, the structure of the first operation controller 250 may bevariously designed as long as the first operation controller 250performs the same function as described above.

The second operation controller 260 may be blocked from the X-raydetection panel 210 when the X-ray detecting operation XDT is performed,and may simultaneously provide the turn-on voltage V1 corresponding tothe gate signal to the pixel circuits PX via the gate-lines GL1 throughGLn when the forward-biasing operation FB and the initializing operationINI are performed. For this operation, the second operation controller260 may include a plurality of second transistors T2 and a secondcontrol transistor CT2. Specifically, a first terminal of the secondtransistor T2 may be coupled to one of the gate-lines GL1 through GLn,and a second terminal of the second transistor T2 may be coupled to agate terminal of the second transistor T2. As illustrated in FIG. 2, thesecond transistors T2 may also be coupled in parallel. In addition, afirst terminal of the second control transistor CT2 may be coupled tothe turn-on voltage V1, a second terminal of the second controltransistor CT2 may be coupled to respective gate terminals of the secondtransistors T2, and a gate terminal of the second control transistor CT2may receive a second control signal M2. As a result, the secondtransistors T2 may simultaneously turn-off when the X-ray detectingoperation XDT is performed because the second control transistor CT2turns-off based on the second control signal M2 (e.g., a low voltagelevel in FIG. 3). On the other hand, the second transistors T2 maysimultaneously turn-on when the forward-biasing operation FB and theinitializing operation INI are performed because the turn-on voltage V1is simultaneously provided to respective gate terminals of the secondtransistors T2 as the second control transistor CT2 turns-on based onthe second control signal M2 (e.g., a high voltage level in FIG. 3).That is, the turn-on voltage V1 may be simultaneously provided to thepixel circuits PX via the gate-lines GL1 through GLn. Thus, the secondoperation controller 260 may be blocked from the X-ray detection panel210 when the X-ray detecting operation XDT is performed in the X-raydetection device 200, and the second operation controller 260 may beconnected to the X-ray detection panel 210 when the forward-biasingoperation FB and the initializing operation INI are performed in theX-ray detection device 200. Since a structure of the second operationcontroller 260 illustrated in FIG. 2 is an example, the structure of thesecond operation controller 260 may be variously designed as long as thesecond operation controller 260 performs the same function as describedabove.

The third operation controller 270 may be blocked from the X-raydetection panel 210 when the X-ray detecting operation XDT is performed,may simultaneously provide the bias reference voltage V2 to the pixelcircuits PX via the data-lines OUT1 through OUTm when theforward-biasing operation FB is performed, and may be blocked from theX-ray detection panel 210 when the initializing operation INI isperformed. For this operation, the third operation controller 270 mayinclude a plurality of third transistors T3, a third sub-transistor ST3,and a third control transistor CT3. Specifically, a first terminal ofthe third transistor T3 may be coupled to one of the data-lines OUT1through OUTm, a second terminal of the third transistor T3 may becoupled to another of the data-lines OUT1 through OUTm, and a gateterminal of the third transistor T3 may be coupled to a second terminalof the third control transistor CT3. In addition, a first terminal ofthe third sub-transistor ST3 may be coupled to the bias referencevoltage V2, a second terminal of the third sub-transistor ST3 may becoupled to one of the third transistors T3, and a gate terminal of thethird sub-transistor ST3 may be coupled to the second terminal of thethird control transistor CT3. As illustrated in FIG. 2, the thirdtransistors T3 and the third sub-transistor ST3 may be coupled inseries. Here, a first terminal of the third control transistor CT3 maybe coupled to the turn-on voltage V1, a second terminal of the thirdcontrol transistor CT3 may be coupled to respective gate terminals ofthe third transistors T3, and a gate terminal of the third controltransistor CT3 may receive a third control signal M3. As a result, thethird transistors T3 and the third sub-transistor ST3 may simultaneouslyturn-off when the initializing operation INI and the X-ray detectingoperation XDT are performed because the third control transistor CT3turns-off based on the third control signal M3 (e.g., a low voltagelevel in FIG. 3). On the other hand, the third transistors T3 and thethird sub-transistor ST3 may simultaneously turn-on when theforward-biasing operation FB is performed because the turn-on voltage V1is simultaneously provided to respective gate terminals of the thirdtransistors T3 and the gate terminal of the third sub-transistor ST3 asthe third control transistor CT3 turns-on based on the third controlsignal M3 (e.g., a high voltage level in FIG. 3). That is, the biasreference voltage V2 may be simultaneously provided to the pixelcircuits PX via the data-lines OUT1 through OUTn. Thus, the thirdoperation controller 270 may be blocked from the X-ray detection panel210 when the initializing operation INI and the X-ray detectingoperation XDT are performed in the X-ray detection device 200, and thethird operation controller 270 may be connected to the X-ray detectionpanel 210 when the forward-biasing operation FB is performed in theX-ray detection device 200. Here, when the forward-biasing operation FBis performed, a voltage level of the bias reference voltage V2 that isprovided via the data-lines OUT1 through OUTm may be lower than avoltage level of the forward-bias voltage that is provided via thebias-lines BVL1 through BVLm. Accordingly, when the forward-biasingoperation FB is performed, a diode of each pixel circuit PX may beforward-biased. Since a structure of the third operation controller 270illustrated in FIG. 2 is an example, the structure of the thirdoperation controller 270 may be variously designed as long as the thirdoperation controller 270 performs the same function as described above.

As such, because of the first through third operation controllers 250,260, and 270, the X-ray detection device 200 may simultaneously performthe forward-biasing operation FB on the pixel circuits PX bysimultaneously providing the turn-on voltage V1 to the pixel circuits PXvia the gate-lines GL1 through GLn, by simultaneously providing the biasreference voltage V2 to the pixel circuits PX via the data-lines OUT1through OUTm, and by simultaneously providing the forward-bias voltageto the pixel circuits PX via the bias-lines BVL1 through BVLm when theforward-biasing operation FB is performed. In addition, because of thefirst through third operation controllers 250, 260, and 270, the X-raydetection device 200 may simultaneously perform the initializingoperation INI on the pixel circuits PX by simultaneously providing theturn-on voltage V1 to the pixel circuits PX via the gate-lines GL1through GLn, by simultaneously providing the initialization referencevoltage to the pixel circuits PX via the data-lines OUT1 through OUTm,and by simultaneously providing the reverse-bias voltage to the pixelcircuits PX via the bias-lines BVL1 through BVLm when the initializingoperation INI is performed. Here, the initialization reference voltagemay be provided by the readout integrated circuit 230 because the thirdoperation controller 270 is blocked from the X-ray detection panel 210when the initializing operation INI is performed. Further, because ofthe first through third operation controllers 250, 260, and 270, theX-ray detection device 200 may sequentially perform the X-ray detectingoperation XDT on the pixel circuits PX for each gate-line bysequentially providing the gate signal to the pixel circuits PX via thegate-lines GL1 through GLn, by simultaneously providing the reverse-biasvoltage to the pixel circuits PX via the bias-lines BVL1 through BVLm,and by sequentially performing the readout operation of the detectionsignal output from the data-lines OUT1 through OUTm when the X-raydetecting operation XDT is performed. Therefore, the X-ray detectiondevice 200 may efficiently reduce an image-lag without fill-factordecreases and frame-rate decreases by simultaneously performing theforward-biasing operation FB on all pixel circuits PX included in theX-ray detection panel 210, and by simultaneously performing theinitializing operation INI on all pixel circuits PX included in theX-ray detection panel 210.

FIGS. 4A and 4B are circuit diagrams illustrating voltages provided toeach pixel circuit as an X-ray detection device of FIG. 2 operates.

Referring to FIGS. 4A and 4B, the pixel circuit PX may include theswitching transistor TR and the diode PD. Specifically, the gateterminal of the switching transistor TR may be coupled to the gate-lineGL, the first terminal of the switching transistor TR may be coupled tothe data-line OUT, and the second terminal of the switching transistorTR may be coupled to the cathode of the diode PD. In addition, the anodeof the diode PD may be coupled to the bias-line BVL.

FIG. 4A shows the voltages that are provided to each pixel circuit PXwhen the forward-biasing operation FB is performed on each pixel circuitPX. As described above, the forward-biasing operation FB issimultaneously performed on all pixel circuits PX included in the X-raydetection panel 210. Specifically, the gate terminal of the switchingtransistor TR may receive the turn-on voltage V1 that is provided fromthe second operation controller 260 via the gate-line GL when theforward-biasing operation FB is performed in the X-ray detection device200. Thus, the switching transistor TR may turn-on. In addition, thefirst terminal of the switching transistor TR may receive the biasreference voltage V2 that is provided from the third operationcontroller 270 via the data-line OUT when the forward-biasing operationFB is performed in the X-ray detection device 200. Further, the anode ofthe diode PD may receive the forward-bias voltage VB that is providedfrom the bias driving circuit 240 via the bias-line BVL when theforward-biasing operation FB is performed in the X-ray detection device200. Here, since a voltage level of the forward-bias voltage VB ishigher than a voltage level of the bias reference voltage V2, the diodePD may be forward-biased, and thus the forward-biasing operation FB maybe performed on the pixel circuit PX.

FIG. 4B shows the voltages that are provided to each pixel circuit PXwhen the initializing operation INI is performed on each pixel circuitPX. As described above, the initializing operation INI is simultaneouslyperformed on all pixel circuits PX included in the X-ray detection panel210. Specifically, the gate terminal of the switching transistor TR mayreceive the turn-on voltage V1 that is provided from the secondoperation controller 260 via the gate-line GL when the initializingoperation INI is performed in the X-ray detection device 200. Thus, theswitching transistor TR may turn-on. In addition, the first terminal ofthe switching transistor TR may receive the initialization referencevoltage VR that is provided from the readout integrated circuit 230 viathe data-line OUT when the initializing operation INI is performed inthe X-ray detection device 200. Further, the anode of the diode PD mayreceive the reverse-bias voltage VB that is provided from the biasdriving circuit 240 via the bias-line BVL when the initializingoperation INI is performed in the X-ray detection device 200. Here,since a voltage level of the reverse-bias voltage VB is lower than avoltage level of the initialization reference voltage VR, the diode PDmay be reverse-biased, and thus the initializing operation INI may beperformed on the pixel circuit PX.

FIG. 5 is a block diagram illustrating another example embodiment of anX-ray detection device of FIG. 1. FIG. 6 is a block diagram illustratinga reference voltage selection circuit for providing a selected referencevoltage to data-lines in an X-ray detection device of FIG. 5. FIG. 7 isa timing diagram illustrating an example in which an X-ray detectiondevice of FIG. 5 operates.

Referring to FIGS. 5 through 7, the other example embodiment of theX-ray detection device 100 of FIG. 1 is illustrated in FIG. 5. Indetail, the X-ray detection device 300 may include an X-ray detectionpanel 310, a gate driving circuit 320, a readout integrated circuit 330,a bias driving circuit 340, and an operation control circuit 350, 360,and 370. Since the X-ray detection panel 310, the gate driving circuit320, the readout integrated circuit 330, and the bias driving circuit340 are described above, the X-ray detection device 300 will bedescribed focused on the operation control circuit 350, 360, and 370. Asdescribed above, the operation control circuit 350, 360, and 370 mayinclude a first operation controller 350, a second operation controller360, and a third operation controller 370 to simultaneously perform aforward-biasing operation on all pixel circuits PX, and tosimultaneously perform an initializing operation on all pixel circuitsPX. As illustrated in FIG. 5, each pixel circuit PX may include aswitching transistor and a diode. Specifically, a gate terminal of theswitching transistor may be coupled to one of the gate-lines GL1 throughGLn, a first terminal of the switching transistor may be coupled to oneof the data-lines OUT1 through OUTm, and a second terminal of theswitching transistor may be coupled to a cathode of the diode. Inaddition, an anode of the diode may be coupled to one of the bias-linesBVL1 through BVLm.

The first operation controller 350 may connect the gate driving circuit320 to the X-ray detection panel 310 when an X-ray detecting operationXDT is performed, and may block the gate driving circuit 320 from theX-ray detection panel 310 when a forward-biasing operation FB and aninitializing operation INI are performed. For this operation, the firstoperation controller 350 may include a plurality of first transistors T1and a first control transistor CT1. Specifically, a first terminal ofthe first transistor T1 may be coupled to one of the gate-lines GL1through GLn, a second terminal of the first transistor T1 may be coupledto the gate driving circuit 320, and a gate terminal of the firsttransistor T1 may be coupled to a second terminal of the first controltransistor CT1. As illustrated in FIG. 5, the first transistors T1 maybe coupled in parallel. In addition, a first terminal of the firstcontrol transistor CT1 may be coupled to a turn-on voltage V1, thesecond terminal of the first control transistor CT1 may be coupled torespective gate terminals of the first transistors T1, and a gateterminal of the first control transistor CT1 may receive a first controlsignal M1. As a result, the first transistors T1 may simultaneouslyturn-on when the X-ray detecting operation XDT is performed because theturn-on voltage V1 is simultaneously provided to respective gateterminals of the first transistors T1 as the first control transistorCT1 turns-on based on the first control signal M1 (e.g., a high voltagelevel in FIG. 7). On the other hand, the first transistors T1 maysimultaneously turn-off when the forward-biasing operation FB and theinitializing operation INI are performed because the first controltransistor CT1 turns-off based on the first control signal M1 (e.g., alow voltage level in FIG. 7). Thus, the gate driving circuit 320 may beconnected to the X-ray detection panel 310 when the X-ray detectingoperation XDT is performed in the X-ray detection device 300, and thegate driving circuit 320 may be blocked from the X-ray detection panel310 when the forward-biasing operation FB and the initializing operationINI are performed in the X-ray detection device 300. Since a structureof the first operation controller 350 illustrated in FIG. 5 is anexample, the structure of the first operation controller 350 may bevariously designed as long as the first operation controller 350performs the same function as described above.

The second operation controller 360 may be blocked from the X-raydetection panel 310 when the X-ray detecting operation XDT is performed,and may simultaneously provide the turn-on voltage V1 corresponding tothe gate signal to the pixel circuits PX via the gate-lines GL1 throughGLn when the forward-biasing operation FB and the initializing operationINI are performed. For this operation, the second operation controller360 may include a plurality of second transistors T2 and a secondcontrol transistor CT2. Specifically, a first terminal of the secondtransistor T2 may be coupled to one of the gate-lines GL1 through GLn,and a second terminal of the second transistor T2 may be coupled to agate terminal of the second transistor T2. As illustrated in FIG. 5, thesecond transistors T2 may also be coupled in parallel. In addition, afirst terminal of the second control transistor CT2 may be coupled tothe turn-on voltage V1, a second terminal of the second controltransistor CT2 may be coupled to respective gate terminals of the secondtransistors T2, and a gate terminal of the second control transistor CT2may receive a second control signal M2. As a result, the secondtransistors T2 may simultaneously turn-off when the X-ray detectingoperation XDT is performed because the second control transistor CT2turns-off based on the second control signal M2 (e.g., a low voltagelevel in FIG. 7). On the other hand, the second transistors T2 maysimultaneously turn-on when the forward-biasing operation FB and theinitializing operation INI are performed because the turn-on voltage V1is simultaneously provided to respective gate terminals of the secondtransistors T2 as the second control transistor CT2 turns-on based onthe second control signal M2 (e.g., a high voltage level in FIG. 7).That is, the turn-on voltage V1 may be simultaneously provided to thepixel circuits PX via the gate-lines GL1 through GLn. Thus, the secondoperation controller 360 may be blocked from the X-ray detection panel310 when the X-ray detecting operation XDT is performed in the X-raydetection device 300, and the second operation controller 360 may beconnected to the X-ray detection panel 310 when the forward-biasingoperation FB and the initializing operation INI are performed in theX-ray detection device 300. Since a structure of the second operationcontroller 360 illustrated in FIG. 5 is an example, the structure of thesecond operation controller 360 may be variously designed as long as thesecond operation controller 360 performs the same function as describedabove.

The third operation controller 370 may be blocked from the X-raydetection panel 310 when the X-ray detecting operation XDT is performed,may simultaneously provide the bias reference voltage V2 to the pixelcircuits PX via the data-lines OUT1 through OUTm when theforward-biasing operation FB is performed, and may simultaneouslyprovide an initialization reference voltage VREF to the pixel circuitsPX via the data-lines OUT1 through OUTm when initializing operation INIis performed. For this operation, the third operation controller 370 mayinclude a plurality of third transistors T3, a third sub-transistor ST3,and a third control transistor CT3. Specifically, a first terminal ofthe third transistor T3 may be coupled to one of the data-lines OUT1through OUTm, a second terminal of the third transistor T3 may becoupled to another of the data-lines OUT1 through OUTm, and a gateterminal of the third transistor T3 may be coupled to a second terminalof the third control transistor CT3. In addition, a first terminal ofthe third sub-transistor ST3 may be coupled to a selection circuit 375,a second terminal of the third sub-transistor ST3 may be coupled to oneof the third transistors T3, and a gate terminal of the thirdsub-transistor ST3 may be coupled to the second terminal of the thirdcontrol transistor CT3. As illustrated in FIG. 5, the third transistorsT3 and the third sub-transistor ST3 may be coupled in series. Here, afirst terminal of the third control transistor CT3 may be coupled to theturn-on voltage V1, a second terminal of the third control transistorCT3 may be coupled to respective gate terminals of the third transistorsT3 and a gate terminal of the third sub-transistor ST3, and a gateterminal of the third control transistor CT3 may receive a third controlsignal M3. As a result, the third transistors T3 and the thirdsub-transistor ST3 may simultaneously turn-off when the X-ray detectingoperation XDT is performed because the third control transistor CT3turns-off based on the third control signal M3 (e.g., a low voltagelevel in FIG. 7). On the other hand, the third transistors T3 and thethird sub-transistor ST3 may simultaneously turn-on when theforward-biasing operation FB and the initializing operation INI areperformed because the turn-on voltage V1 is simultaneously provided torespective gate terminals of the third transistors T3 and the gateterminal of the third sub-transistor ST3 as the third control transistorCT3 turns-on based on the third control signal M3 (e.g., a high voltagelevel in FIG. 7).

As described above, the first terminal of the third sub-transistor ST3may be coupled to the selection circuit 375. As illustrated in FIG. 6,the selection circuit 375 may selectively output the bias referencevoltage V2 and the initialization reference voltage VREF by performing aswitching operation when the forward-biasing operation FB and theinitializing operation INI are performed in the X-ray detection device300. Specifically, the third operation controller 370 may simultaneouslyprovide the bias reference voltage V2 to the pixel circuits PX via thedata-lines OUT1 through OUTm because the selection circuit 375 selectsthe bias reference voltage V2 when the forward-biasing operation FB isperformed in the X-ray detection device 300. In addition, the thirdoperation controller 370 may simultaneously provide the initializationreference voltage VREF to the pixel circuits PX via the data-lines OUT1through OUTm because the selection circuit 375 selects theinitialization reference voltage VREF when the initializing operationINI is performed in the X-ray detection device 300. Thus, the thirdoperation controller 370 may be blocked from the X-ray detection panel310 when the X-ray detecting operation XDT is performed in the X-raydetection device 300, and the third operation controller 370 may beconnected to the X-ray detection panel 310 when the forward-biasingoperation FB and the initializing operation INI are performed in theX-ray detection device 300. Here, when the forward-biasing operation FBis performed, a voltage level of the bias reference voltage V2 that isprovided via the data-lines OUT1 through OUTm may be lower than avoltage level of the forward-bias voltage that is provided via thebias-lines BVL1 through BVLm. Accordingly, when the forward-biasingoperation FB is performed, a diode of each pixel circuit PX may beforward-biased. In addition, when the initializing operation INI isperformed, a voltage level of the initialization reference voltage VREFthat is provided via the data-lines OUT1 through OUTm may be higher thana voltage level of the reverse-bias voltage that is provided via thebias-lines BVL1 through BVLm. Accordingly, when the initializingoperation INI is performed, the diode of each pixel circuit PX may bereverse-biased. Since a structure of the third operation controller 370illustrated in FIG. 5 is an example, the structure of the thirdoperation controller 370 may be variously designed as long as the thirdoperation controller 370 performs the same function as described above.

Accordingly, because of the first through third operation controllers350, 360, and 370, the X-ray detection device 300 may simultaneouslyperform the forward-biasing operation FB on the pixel circuits PX bysimultaneously providing the turn-on voltage V1 to the pixel circuits PXvia the gate-lines GL1 through GLn, by simultaneously providing the biasreference voltage V2 to the pixel circuits PX via the data-lines OUT1through OUTm, and by simultaneously providing the forward-bias voltageto the pixel circuits PX via the bias-lines BVL1 through BVLm when theforward-biasing operation FB is performed. In addition, because of thefirst through third operation controllers 350, 360, and 370, the X-raydetection device 300 may simultaneously perform the initializingoperation INI on the pixel circuits PX by simultaneously providing theturn-on voltage V1 to the pixel circuits PX via the gate-lines GL1through GLn, by simultaneously providing the initialization referencevoltage VREF to the pixel circuits PX via the data-lines OUT1 throughOUTm, and by simultaneously providing the reverse-bias voltage to thepixel circuits PX via the bias-lines BVL1 through BVLm when theinitializing operation INI is performed. Here, the initializationreference voltage VREF may be provided by the X-ray detection panel 310because the third operation controller 370 is connected to the X-raydetection panel 310 when the initializing operation INI is performed.Further, because of the first through third operation controllers 350,360, and 370, the X-ray detection device 300 may sequentially performthe X-ray detecting operation XDT on the pixel circuits PX for eachgate-line by sequentially providing the gate signal to the pixelcircuits PX via the gate-lines GL1 through GLn, by simultaneouslyproviding the reverse-bias voltage to the pixel circuits PX via thebias-lines BVL1 through BVLm, and by sequentially performing the readoutoperation of the detection signal output from the data-lines OUT1through OUTm when the X-ray detecting operation XDT is performed.Therefore, the X-ray detection device 300 may efficiently reduce animage-lag without fill-factor decreases and frame-rate decreases bysimultaneously performing the forward-biasing operation FB on all pixelcircuits PX included in the X-ray detection panel 310, and by performingthe initializing operation INI on all pixel circuits PX included in theX-ray detection panel 310.

FIGS. 8A and 8B are circuit diagrams illustrating voltages provided toeach pixel circuit as an X-ray detection device of FIG. 5 operates.

Referring to FIGS. 8A and 8B, the pixel circuit PX may include theswitching transistor TR and the diode PD. Specifically, the gateterminal of the switching transistor TR may be coupled to the gate-lineGL, the first terminal of the switching transistor TR may be coupled tothe data-line OUT, and the second terminal of the switching transistorTR may be coupled to the cathode of the diode PD. In addition, the anodeof the diode PD may be coupled to the bias-line BVL.

FIG. 8A shows the voltages that are provided to each pixel circuit PXwhen the forward-biasing operation FB is performed on each pixel circuitPX. As described above, the forward-biasing operation FB issimultaneously performed on all pixel circuits PX included in the X-raydetection panel 310. Specifically, the gate terminal of the switchingtransistor TR may receive the turn-on voltage V1 that is provided fromthe second operation controller 360 via the gate-line GL when theforward-biasing operation FB is performed in the X-ray detection device300. Thus, the switching transistor TR may turn-on. In addition, thefirst terminal of the switching transistor TR may receive the biasreference voltage V2 that is provided from the third operationcontroller 370 via the data-line OUT when the forward-biasing operationFB is performed in the X-ray detection device 300. Further, the anode ofthe diode PD may receive the forward-bias voltage VB that is providedfrom the bias driving circuit 340 via the bias-line BVL when theforward-biasing operation FB is performed in the X-ray detection device300. Here, since a voltage level of the forward-bias voltage VB ishigher than a voltage level of the bias reference voltage V2, the diodePD may be forward-biased, and thus the forward-biasing operation FB maybe performed on the pixel circuit PX.

FIG. 8B shows the voltages that are provided to each pixel circuit PXwhen the initializing operation INI is performed on each pixel circuitPX. As described above, the initializing operation INI is simultaneouslyperformed on all pixel circuits PX included in the X-ray detection panel310. Specifically, the gate terminal of the switching transistor TR mayreceive the turn-on voltage V1 that is provided from the secondoperation controller 360 via the gate-line GL when the initializingoperation INI is performed in the X-ray detection device 300. Thus, theswitching transistor TR may turn-on. In addition, the first terminal ofthe switching transistor TR may receive the initialization referencevoltage VREF that is provided from the third operation controller 370via the data-line OUT when the initializing operation INI is performedin the X-ray detection device 300. Further, the anode of the diode PDmay receive the reverse-bias voltage VB that is provided from the biasdriving circuit 340 via the bias-line BVL when the initializingoperation INI is performed in the X-ray detection device 300. Here,since a voltage level of the reverse-bias voltage VB is lower than avoltage level of the initialization reference voltage VREF, the diode PDmay be reverse-biased, and thus the initializing operation INI may beperformed on the pixel circuit PX.

FIG. 9 is a flow chart illustrating a method of driving an X-raydetection panel according to example embodiments.

Referring to FIG. 9, the method of FIG. 9 may simultaneously perform aforward-biasing operation on all pixel circuits included in an X-raydetection panel (Step S120), where the X-ray detection panel includes aplurality of gate-lines, a plurality of data-lines, a plurality ofbias-lines, and a plurality of pixel circuits, may simultaneouslyperform an initializing operation on all pixel circuits (Step S140), andmay sequentially perform an X-ray detecting operation on the pixelcircuits for each gate-line (Step S160). The Steps S120, S140, and S160can be repeated. Here, each pixel circuit may include a switchingtransistor and a diode. Specifically, a gate terminal of the switchingtransistor may be coupled to one of the gate-lines, a first terminal ofthe switching transistor may be coupled to one of the data-lines, and asecond terminal of the switching transistor may be coupled to a cathodeof the diode. In addition, an anode of the diode may be coupled to oneof the bias-lines. On this basis, the method of FIG. 9 maysimultaneously provide a turn-on voltage to the gate-lines, maysimultaneously provide a bias reference voltage to the data-lines, andmay simultaneously provide a forward-bias voltage to the bias-lines tosimultaneously perform the forward-biasing operation on all pixelcircuits included in the X-ray detection panel. In addition, the methodof FIG. 9 may simultaneously provide the turn-on voltage to thegate-lines, may simultaneously provide the initialization referencevoltage to the data-lines, and may simultaneously provide thereverse-bias voltage to the bias-lines to simultaneously perform theinitializing operation on all pixel circuits included in the X-raydetection panel. Further, the method of FIG. 9 may sequentially providethe gate signal to the gate-lines, may simultaneously provide thereverse-bias voltage to the bias-lines, and may sequentially perform areadout operation of a detection signal output from the data-lines tosequentially perform the X-ray detection operation on the pixel circuitsincluded in the X-ray detection panel. Therefore, the method of FIG. 1may efficiently reduce an image-lag without fill-factor decreases andframe-rate decreases by simultaneously performing the forward-biasingoperation on all pixel circuits included in the X-ray detection panel,and by performing the initializing operation on all pixel circuitsincluded in the X-ray detection panel.

FIG. 10 is a block diagram illustrating a computing system having anX-ray detection device according to example embodiments.

Referring to FIG. 10, the computing system 500 may include a processor510, a memory device 520, a storage device 530, an input/output (I/O)device 540, a power supply 550, and an X-ray detection device 560. Here,the X-ray detection device 560 may correspond to the X-ray detectiondevice 100 of FIG. 1. In addition, the computing system 500 may furtherinclude a plurality of ports for communicating a video card, a soundcard, a memory card, a universal serial bus (USB) device, otherelectronic devices, etc.

The processor 510 may perform various computing functions. The processor510 may be a micro-processor, a central processing unit (CPU), etc. Theprocessor 510 may be coupled to other components via an address bus, acontrol bus, a data bus, etc. Further, the processor 510 may be coupledto an extended bus such as a peripheral component interconnection (PCI)bus. The memory device 520 may store data for operations of thecomputing system 500. For example, the memory device 520 may include atleast one non-volatile memory device such as an erasable programmableread-only memory (EPROM) device, an electrically erasable programmableread-only memory (EEPROM) device, a flash memory device, a phase changerandom access memory (PRAM) device, a resistance random access memory(RRAM) device, a nano floating gate memory (NFGM) device, a polymerrandom access memory (PoRAM) device, a magnetic random access memory(MRAM) device, a ferroelectric random access memory (FRAM) device, etc,and/or at least one volatile memory device such as a dynamic randomaccess memory (DRAM) device, a static random access memory (SRAM)device, a mobile DRAM device, etc. The storage device 530 may be a solidstate drive (SSD) device, a hard disk drive (HDD) device, a CD-ROMdevice, etc.

The I/O device 540 may be an input device such as a keyboard, a keypad,a touchpad, a touch-screen, a mouse, etc, and an output device such as adisplay device (e.g., a liquid crystal display device, an organic lightemitting display device, etc), a printer, a speaker, etc. The powersupply 550 may provide a power for operations of the computing system500. The X-ray detection device 560 may communicate with othercomponents via the buses or other communication links. As describedabove, the X-ray detection device 560 may include an X-ray detectionpanel, a gate driving circuit, a readout integrated circuit, a biasdriving circuit, and an operation control circuit (i.e., first throughthird operation controllers). On this basis, the X-ray detection device560 may simultaneously perform a forward-biasing operation on all pixelcircuits included in the X-ray detection panel, and may simultaneouslyperform an initializing operation on all pixel circuits included in theX-ray detection panel. As a result, the X-ray detection device 560 mayefficiently reduce an image-lag without fill-factor decreases andframe-rate decreases. Since the X-ray detection device 560 is describedabove, a detailed description related to the X-ray detection device 560will not be repeated. The present inventive concept may be applied toany suitable computing system having an X-ray detection device.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concept. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcept as defined in the claims. Therefore, it is to be understood thatthe foregoing is illustrative of various example embodiments and is notto be construed as limited to the specific example embodimentsdisclosed, and that modifications to the disclosed example embodiments,as well as other example embodiments, are intended to be included withinthe scope of the appended claims, and equivalents thereof.

What is claimed is:
 1. An X-ray detection device comprising: an X-raydetection panel having a plurality of gate-lines, a plurality ofdata-lines, a plurality of bias-lines, and a plurality of pixelcircuits; a gate driving circuit configured to sequentially provide agate signal to the pixel circuits via the gate-lines when an X-raydetecting operation is performed; a readout integrated circuitconfigured to perform a readout operation of a detection signal that isoutput from the pixel circuits via the data-lines when the X-raydetecting operation is performed; a bias driving circuit configured toprovide a forward-bias voltage or a reverse-bias voltage to the pixelcircuits via the bias-lines; and an operation control circuit configuredto control a forward-biasing operation to be simultaneously performed onthe pixel circuits, and an initializing operation to be simultaneouslyperformed on the pixel circuits, wherein the operation control circuitcomprises: a first operation controller configured to connect the gatedriving circuit to the X-ray detection panel when the X-ray detectingoperation is performed, and to block the gate driving circuit from theX-ray detection panel when the forward-biasing operation and theinitializing operation are performed; and a second operation controllerconfigured to be blocked from the X-ray detection panel when the X-raydetecting operation is performed, and to simultaneously provide aturn-on voltage corresponding to the gate signal to the pixel circuitsvia the gate-lines when the forward-biasing operation and theinitializing operation are performed.
 2. The device of claim 1, whereineach of the pixel circuits comprises: a switching transistor having agate terminal coupled to one of the gate-lines and a first terminalcoupled to one of the data-lines; and a diode having a cathode coupledto a second terminal of the switching transistor and an anode coupled toone of the bias-lines.
 3. The device of claim 2, wherein the diode isconfigured to receive an X-ray to generate charges corresponding to thedetection signal.
 4. The device of claim 2, wherein the diode isconfigured to receive a visible-ray to generate charges corresponding tothe detection signal when an X-ray is converted to the visible-ray by ascintillator.
 5. The device of claim 2, wherein the operation controlcircuit comprises: a third operation controller configured to be blockedfrom the X-ray detection panel when the X-ray detecting operation isperformed, and to simultaneously provide a bias reference voltage to thepixel circuits via the data-lines when the forward-biasing operation isperformed.
 6. The device of claim 5, wherein the bias driving circuit isconfigured to provide the reverse-bias voltage to the pixel circuitswhen the initializing operation and the X-ray detecting operation areperformed, and wherein the bias driving circuit is configured to providethe forward-bias voltage to the pixel circuits when the forward-biasingoperation is performed.
 7. The device of claim 5, wherein the firstoperation controller comprises: a plurality of first transistors eachhaving a first terminal coupled to one of the gate-lines and a secondterminal coupled to the gate driving circuit; and a first controltransistor having a first terminal coupled to the turn-on voltage, asecond terminal coupled to respective gate terminals of the firsttransistors, and a gate terminal is configured to receive a firstcontrol signal.
 8. The device of claim 7, wherein the first controltransistor is configured to turn-on based on the first control signal,and the first transistors simultaneously are configured to turn-on whenthe X-ray detecting operation is performed, and wherein the firstcontrol transistor is configured to turn-off based on the first controlsignal, and the first transistors simultaneously are configured toturn-off when the forward-biasing operation and the initializingoperation are performed.
 9. The device of claim 5, wherein the secondoperation controller comprises: a plurality of second transistors eachhaving a first terminal coupled to one of the gate-lines and a secondterminal coupled to a gate terminal of the second transistor; and asecond control transistor having a first terminal coupled to the turn-onvoltage, a second terminal coupled to respective gate terminals of thesecond transistors, and a gate terminal is configured to receive asecond control signal.
 10. The device of claim 9, wherein the secondcontrol transistor is configured to turn-off based on the second controlsignal, and the second transistors simultaneously are configured toturn-off when the X-ray detecting operation is performed, and whereinthe second control transistor is configured to turn-on based on thesecond control signal, and the second transistors simultaneously areconfigured to turn-on when the forward-biasing operation and theinitializing operation are performed.
 11. The device of claim 5, whereinthe third operation controller comprises: a plurality of thirdtransistors each having a first terminal coupled to one of thedata-lines and a second terminal coupled to another of the data-lines; athird sub-transistor having a first terminal coupled to the biasreference voltage and a second terminal coupled to one of the thirdtransistors; and a third control transistor having a first terminalcoupled to the turn-on voltage, a second terminal coupled to respectivegate terminals of the third transistors and a gate terminal of the thirdsub-transistor, and a gate terminal is configured to receive a thirdcontrol signal.
 12. The device of claim 11, wherein the third controltransistor is configured to turn-off based on the third control signal,and the third sub-transistor and the third transistors simultaneouslyare configured to turn-off when the initializing operation and the X-raydetecting operation are performed, and wherein the third controltransistor is configured to turn-on based on the third control signal,and the third sub-transistor and the third transistors simultaneouslyare configured to turn-on when the forward-biasing operation isperformed.
 13. The device of claim 12, wherein an initializationreference voltage is provided to the data-lines by the readoutintegrated circuit when the initializing operation is performed.
 14. Thedevice of claim 5, wherein the third operation controller comprises: aplurality of third transistors each having a first terminal coupled toone of the data-lines and a second terminal coupled to another of thedata-lines; a reference voltage selection circuit configured to outputthe bias reference voltage when the forward-biasing operation isperformed, and to output an initialization reference voltage when theinitializing operation is performed; a third sub-transistor having afirst terminal coupled to the reference voltage selection circuit and asecond terminal coupled to one of the third transistors; and a thirdcontrol transistor having a first terminal coupled to the turn-onvoltage, a second terminal coupled to respective gate terminals of thethird transistors and a gate terminal of the third sub-transistor, and agate terminal is configured to receive a third control signal.
 15. Thedevice of claim 14, wherein the third control transistor is configuredto turn-off based on the third control signal, and the thirdsub-transistor and the third transistors are configured tosimultaneously turn-off when the X-ray detecting operation is performed,and wherein the third control transistor is configured to turn-on basedon the third control signal, and the third sub-transistor and the thirdtransistors simultaneously are configured to turn-on when theforward-biasing operation and the initializing operation are performed.16. The device of claim 15, wherein the initialization reference voltageis provided to the data-lines by the third operation controller when theinitializing operation is performed.
 17. A method of driving an X-raydetection panel having a plurality of gate-lines, a plurality ofdata-lines, a plurality of bias-lines, a plurality of pixel circuits,and an operation control circuit, the method comprising: simultaneouslyperforming a forward-biasing operation on the pixel circuits via theoperation control circuit; simultaneously performing an initializingoperation on the pixel circuits via the operation control circuit; andsequentially performing an X-ray detecting operation on the pixelcircuits for each gate-line via the operation control circuit, whereinthe operation control circuit comprises: a first operation controllerconfigured to connect the gate driving circuit to the X-ray detectionpanel when the X-ray detecting operation is performed, and to block thegate driving circuit from the X-ray detection panel when theforward-biasing operation and the initializing operation are performed;and a second operation controller configured to be blocked from theX-ray detection panel when the X-ray detecting operation is performed,and to simultaneously provide a turn-on voltage corresponding to a gatesignal to the pixel circuits via the gate-lines when the forward-biasingoperation and the initializing operation are performed.
 18. The methodof claim 17, wherein the simultaneously performing of theforward-biasing operation comprises: simultaneously providing a turn-onvoltage to the gate-lines; simultaneously providing a bias referencevoltage to the data-lines; and simultaneously providing a forward-biasvoltage to the bias-lines.
 19. The method of claim 17, wherein thesimultaneously performing of the initializing operation comprises:simultaneously providing a turn-on voltage to the gate-lines;simultaneously providing an initialization reference voltage to thedata-lines; and simultaneously providing a reverse-bias voltage to thebias-lines.
 20. The method of claim 17, wherein the sequentiallyperforming of the X-ray detecting operation comprises: sequentiallyproviding a gate signal to the gate-lines; simultaneously providing areverse-bias voltage to the bias-lines; and sequentially performing areadout operation of a detection signal that is output from thedata-lines.
 21. A system of driving an X-ray detection panel having aplurality of gate-lines, a plurality of data-lines, a plurality ofbias-lines, and a plurality of pixel circuits, the system comprising:means for simultaneously performing a forward-biasing operation on thepixel circuits; means for simultaneously performing an initializingoperation on the pixel circuits; and means for sequentially performingan X-ray detecting operation on the pixel circuits for each gate-line.